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| MITSUBISHI SEMICONDUCTOR MGFC41V5964 5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC41V5964 is an internally impedence matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high raliability. OUTLINE DRAWING 24+/-0.3 R1.25 (1) Unit: millimeters (inches) FEATURES Internally matched to 50ohm system High output power P1dB = 12W (TIP.) @ f=5.9 - 6.4 Hz High power gain GLP = 9.5 dB (TYP.) @ f=5.9 - 6.4 GHz High power added efficiency Eadd = 33 % (TYP.) @ f=5.9 - 6.4 GHz Low Distortion[Item-51] IM3=-45 dBc(TYP.)@Po=30dBm S.C.L. 2MIN 0.6+/-0.15 R1.2 17.4+/-0.3 8.0+/-0.2 (2) 2MIN (3) 20.4+/-0.2 APPLICATION QUALITY GRADE IG 0.1 1.4 2.4+/-0.2 5.9 - 6.4GHz band amplifiers 4.0+/-0.4 13.4 RECOMMENDED BIAS CONDITIONS VDS = 10V ID = 3.4 A Rg = 50(ohm) Refer to Bias Procedure GF-18 (1): GATE (2): SOURCE (FLANGE) (3): DRAIN ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID IGR IGF PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation *1 Channel temperature Storage temperature Ratings -15 -15 12 -30 63 53.6 175 -65 to +175 Unit V V A mA mA W DegreesC DegreesC *1 : Tc=25 DegreesC ABSOLUTE MAXIMUM RATINGS Symbol IDSS gm VGS(off) P1dB GLP Eadd IM3 *2 Rth(ch-c) Parameter Saturated drain current Transconductance Gate to source cut-off voltage Output power at 1dB gain compression Linear power gain Power added efficiency 3rd order IM distortion Thermal resistance *1 Delta Vf method Test conditions Min VDS = 3V , VGS = 0V VDS = 3V , ID = 3.0A VDS = 3V , ID = 30mA 40 VDS = 10V , ID = 3.4A , f = 5.9 - 6.4 GHz 8.5 -42 Limits Typ 3 41 9.5 33 -45 Max 12 -5 2.8 A S V dBm dB % dBc C/W Unit *1 : Channel to case *2 : Item-51,2tone test,Po=30dBm Single Carrier Level,f=6.4GHz,Delta f=10MHz MITSUBISHI ELECTRIC June/2004 15.8 MITSUBISHI SEMICONDUCTOR MGFC41V5964 5.9-6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS P1dB,GLP vs. f 43 VDS=10V ID=3.4A 42 OUTPUT POWER P1dB (dBm) P1dB (Ta=25 DegreesC) Po,Eadd vs. Pin 18 45 VDS=10V V ID=3.4A6 4 IDS f=6.15GHz VDS=10 100 16 OUTPUT POWER Po (dBm) 40 80 POWER ADDED EFFICIENCY Eadd (%) Po LINEAR POWER GAIN GLP (dB) 41 14 35 60 40 GLP 12 30 Eadd 25 40 39 10 20 38 8 37 5.8 5.9 6.0 6.1 6.2 6.3 6.4 6.5 FREQUENCY f (GHz) Po,IM3 vs. Pin 36 VDS=10V IDS=3.4A f=6.4GHz Delta f=10MHz 2-tone test 6 20 15 20 25 30 35 INPUT POWER Pin (dBm) 0 0 OUTPUT POWER Po (dBm) S.C.L. 34 -10 32 Po -20 30 IM3 28 -30 IM3 (dBc) -40 26 -50 24 17 19 21 23 25 27 -60 S INPUT (Ta=25 Pin (dBm) , V PARAMETERS POWER DegreesCS.C.L. =10V , IDS=3.4A) DS S Parameters (TYP.) f (GHz) 5.9 6.0 6.1 6.2 6.3 6.4 S11 Magn. Angle(deg.) 0.37 0.35 0.32 0.29 0.25 0.23 124 105 84 64 38 8 S21 Magn. Angle(deg.) 2.98 2.94 2.91 2.88 2.86 2.83 -81 -96 -112 -128 -144 -161 Magn. 0.051 0.053 0.058 0.060 0.064 0.066 S12 Angle(deg.) -131 -145 -163 -177 167 152 Magn. 0.31 0.31 0.30 0.29 0.26 0.22 S22 Angle(deg.) 111 102 94 87 82 81 MITSUBISHI ELECTRIC June/2004 MITSUBISHI SEMICONDUCTOR MGFC41V5964 5.9 ~ 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004 |
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